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Advanced characterization studies of sapphire substrate misorientation effects on GaN-based LED device development

✍ Scribed by Lu, D. ;Florescu, D. I. ;Lee, D. S. ;Merai, V. ;Parekh, A. ;Ramer, J. C. ;Guo, S. P. ;Armour, E.

Book ID
105361855
Publisher
John Wiley and Sons
Year
2003
Tongue
English
Weight
124 KB
Volume
200
Category
Article
ISSN
0031-8965

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## Abstract Sapphire substrates were nanopatterned by dry (inductively coupled plasma, ICP) etching to improve the performance of GaN‐based light‐emitting diodes (LEDs). GaN‐based LEDs on nanopatterned sapphire substrates (NPSS) were fabricated by metal organic chemical vapor deposition (MOCVD). Th