Fabrication and characterization of GaN-
β
Gao, Haiyong ;Yan, Fawang ;Zhang, Yang ;Li, Jinmin ;Zeng, Yiping ;Wang, Guohong
π
Article
π
2008
π
John Wiley and Sons
π
English
β 581 KB
## Abstract Sapphire substrates were nanopatterned by dry (inductively coupled plasma, ICP) etching to improve the performance of GaNβbased lightβemitting diodes (LEDs). GaNβbased LEDs on nanopatterned sapphire substrates (NPSS) were fabricated by metal organic chemical vapor deposition (MOCVD). Th