## Abstract Electronic and optical properties of 440 and 530βnm staggered InGaN/InGaN/GaN quantumβwell (QW) lightβemitting diodes are investigated using the multiband effectiveβmass theory. These results are compared with those of conventional InGaN/GaN QW structures. The staggered QW structure req
β¦ LIBER β¦
Excitonic characteristics of wurtzite InGaN staggered quantum wells for light-emitting diode applications
β Scribed by Xia, Congxin; Zhang, Heng; Jia, Yalei; Wei, Shuyi; Jia, Yu
- Book ID
- 119366696
- Publisher
- Elsevier Science
- Year
- 2013
- Tongue
- English
- Weight
- 270 KB
- Volume
- 68
- Category
- Article
- ISSN
- 1359-6462
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