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Design and characteristics of staggered InGaN quantum-well light-emitting diodes in the green spectral regime

✍ Scribed by Zhao, H.P.; Liu, G.Y.; Li, X.H.; Arif, R.A.; Huang, G.S.; Poplawsky, J.D.; Tafon Penn, S.; Dierolf, V.; Tansu, N.

Book ID
114444541
Publisher
The Institution of Engineering and Technology
Year
2009
Tongue
English
Weight
933 KB
Volume
3
Category
Article
ISSN
1751-8768

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## Abstract Electronic and optical properties of 440 and 530 nm staggered InGaN/InGaN/GaN quantum‐well (QW) light‐emitting diodes are investigated using the multiband effective‐mass theory. These results are compared with those of conventional InGaN/GaN QW structures. The staggered QW structure req