## Abstract Electronic and optical properties of 440 and 530 nm staggered InGaN/InGaN/GaN quantum‐well (QW) light‐emitting diodes are investigated using the multiband effective‐mass theory. These results are compared with those of conventional InGaN/GaN QW structures. The staggered QW structure req
✦ LIBER ✦
Design of violet InGaN light-emitting diode with staggered quantum well structure
✍ Scribed by Wei-jun Li; Bo Zhang; Wen-Lan Xu; Wei Lu
- Book ID
- 107509553
- Publisher
- Tianjin University of Technology
- Year
- 2008
- Tongue
- English
- Weight
- 167 KB
- Volume
- 4
- Category
- Article
- ISSN
- 1673-1905
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