✦ LIBER ✦

Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes

✍ Scribed by Nakamura, Shuji; Senoh, Masayuki; Iwasa, Naruhito; Nagahama, Shin-ichi; Yamada, Takao; Mukai, Takashi

Book ID: 118004741
Publisher: Institute of Pure and Applied Physics
Year: 1995
Tongue: English
Weight: 613 KB
Volume: 34
Category: Article
ISSN: 0021-4922
DOI: 10.1143/jjap.34.l1332

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Localized quantum well excitons in InGaN

Localized quantum well excitons in InGaN single-quantum-well amber light-emitting diodes

✍ Chichibu, S. F.; Azuhata, T.; Sota, T.; Mukai, T.; Nakamura, S. 📂 Article 📅 2000 🏛 American Institute of Physics 🌐 English ⚖ 558 KB

High‐power InGaN single‐quantum‐well‐str

High‐power InGaN single‐quantum‐well‐structure blue and violet light‐emitting diodes

✍ Nakamura, Shuji; Senoh, Masayuki; Iwasa, Naruhito; Nagahama, Shin‐ichi 📂 Article 📅 1995 🏛 American Institute of Physics 🌐 English ⚖ 402 KB

InGaN/GaN multiple quantum well green li

InGaN/GaN multiple quantum well green light-emitting diodes prepared by temperature ramping

✍ T. C. Wen; S. J. Chang; Y. K. Su; L. W. Wu; C. H. Kuo; W. C. Lai; J. K. Sheu; T. 📂 Article 📅 2003 🏛 Springer US 🌐 English ⚖ 191 KB

InGaN-GaN multiquantum-well blue and gre

InGaN-GaN multiquantum-well blue and green light-emitting diodes

✍ Chang, S.J.; Lai, W.C.; Su, Y.K.; Chen, J.F.; Liu, C.H.; Liaw, U.H. 📂 Article 📅 2002 🏛 IEEE 🌐 English ⚖ 283 KB

Design of violet InGaN light-emitting di

Design of violet InGaN light-emitting diode with staggered quantum well structure

✍ Wei-jun Li; Bo Zhang; Wen-Lan Xu; Wei Lu 📂 Article 📅 2008 🏛 Tianjin University of Technology 🌐 English ⚖ 167 KB

Electronic and optical properties of sta

Electronic and optical properties of staggered InGaN/InGaN quantum-well light-emitting diodes

✍ Park, Seoung-Hwan ;Ahn, Doyeol ;Koo, Bun-Hei ;Kim, Jong-Wook 📂 Article 📅 2009 🏛 John Wiley and Sons 🌐 English ⚖ 350 KB

## Abstract Electronic and optical properties of 440 and 530 nm staggered InGaN/InGaN/GaN quantum‐well (QW) light‐emitting diodes are investigated using the multiband effective‐mass theory. These results are compared with those of conventional InGaN/GaN QW structures. The staggered QW structure req