Localized quantum well excitons in InGaN single-quantum-well amber light-emitting diodes
✍ Scribed by Chichibu, S. F.; Azuhata, T.; Sota, T.; Mukai, T.; Nakamura, S.
- Book ID
- 115525399
- Publisher
- American Institute of Physics
- Year
- 2000
- Tongue
- English
- Weight
- 558 KB
- Volume
- 88
- Category
- Article
- ISSN
- 0021-8979
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Subject classification: 85.60.Jb; S7.14 An intermediate layer consisting of AlN/AlGaN was used in the growth of InGaN multiple-quantum-well LEDs structure on Si(111) substrates. Crack-free films in 2 inch wafer and high-brightness LEDs were obtained. At 20 mA, the voltage is about 8.0 and 16.0 V for
## Abstract Electronic and optical properties of 440 and 530 nm staggered InGaN/InGaN/GaN quantum‐well (QW) light‐emitting diodes are investigated using the multiband effective‐mass theory. These results are compared with those of conventional InGaN/GaN QW structures. The staggered QW structure req