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Advantages of blue InGaN multiple-quantum well light-emitting diodes with InGaN barriers

โœ Scribed by Kuo, Yen-Kuang; Chang, Jih-Yuan; Tsai, Miao-Chan; Yen, Sheng-Horng

Book ID
118143191
Publisher
American Institute of Physics
Year
2009
Tongue
English
Weight
728 KB
Volume
95
Category
Article
ISSN
0003-6951

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Subject classification: 85.60.Jb; S7.14 An intermediate layer consisting of AlN/AlGaN was used in the growth of InGaN multiple-quantum-well LEDs structure on Si(111) substrates. Crack-free films in 2 inch wafer and high-brightness LEDs were obtained. At 20 mA, the voltage is about 8.0 and 16.0 V for