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Improvement in output power of a 460 nm InGaN light-emitting diode using staggered quantum well

✍ Scribed by Liao, Chih-Teng; Tsai, Miao-Chan; Liou, Bo-Ting; Yen, Sheng-Horng; Kuo, Yen-Kuang


Book ID
118143192
Publisher
American Institute of Physics
Year
2010
Tongue
English
Weight
510 KB
Volume
108
Category
Article
ISSN
0021-8979

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Nanostructure engineering of staggered I
✍ Arif, Ronald A. ;Ee, Yik-Khoon ;Tansu, Nelson πŸ“‚ Article πŸ“… 2008 πŸ› John Wiley and Sons 🌐 English βš– 294 KB

## Abstract We demonstrated staggered InGaN quantum wells (QW) grown by metalorganic chemical vapor deposition (MOCVD) as improved active region for visible light emitters. Theoretical studies indicate that staggered InGaN QW with step‐function like In‐content in the well offers significantly impro