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Polarization engineering via staggered InGaN quantum wells for radiative efficiency enhancement of light emitting diodes

✍ Scribed by Arif, Ronald A.; Ee, Yik-Khoon; Tansu, Nelson


Book ID
118026635
Publisher
American Institute of Physics
Year
2007
Tongue
English
Weight
655 KB
Volume
91
Category
Article
ISSN
0003-6951

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Nanostructure engineering of staggered I
✍ Arif, Ronald A. ;Ee, Yik-Khoon ;Tansu, Nelson πŸ“‚ Article πŸ“… 2008 πŸ› John Wiley and Sons 🌐 English βš– 294 KB

## Abstract We demonstrated staggered InGaN quantum wells (QW) grown by metalorganic chemical vapor deposition (MOCVD) as improved active region for visible light emitters. Theoretical studies indicate that staggered InGaN QW with step‐function like In‐content in the well offers significantly impro