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Enhancement of light-emission efficiency of ultraviolet InGaN/GaN multiple quantum well light emitting diode with InGaN underlying layer

✍ Scribed by Liu, Lei; Wang, Lei; Lu, Cimang; Li, Ding; Liu, Ningyang; Li, Lei; Yang, Wei; Cao, Wenyu; Chen, Weihua; Du, Weimin; Hu, Xiaodong; Feng, Zhe Chuan; Huang, Wei; Lee, Yueh-Chien

Book ID
118782125
Publisher
Springer
Year
2012
Tongue
English
Weight
728 KB
Volume
108
Category
Article
ISSN
1432-0630

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✍ J. Danhof; U. T. Schwarz; T. Meyer; C. Vierheilig; M. Peter πŸ“‚ Article πŸ“… 2011 πŸ› John Wiley and Sons 🌐 English βš– 254 KB

## Abstract Excitation density‐dependent microphotoluminescence measurements were performed on a green light (515 nm) emitting InGaN/GaN multiquantum well sample of low threading dislocation density (5 × 10^7^ cm^βˆ’2^). For the observed structure we find a different shape of the local internal quant