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Evaluation of free-carrier concentration in Si+-implanted InP by means of photoluminescence

✍ Scribed by J Ibáñez; R Cuscó; L Artús; E de la Puente; J Jiménez


Book ID
114164757
Publisher
Elsevier Science
Year
2001
Tongue
English
Weight
91 KB
Volume
175-177
Category
Article
ISSN
0168-583X

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Calibration curves to determine P, B, and A1 concentrations in silicon at 4.2 K from the intensity ratios of bound (BE) and free (FE) exciton related luminescence are presented. The integral relative intensities of the peaks are used besides the peak height ratios. By means of a large number of samp