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Effect of stress and free-carrier concentration on photoluminescence in InN

✍ Scribed by Song, D. Y.; Holtz, M. E.; Chandolu, A.; Bernussi, A.; Nikishin, S. A.; Holtz, M. W.; Gherasoiu, I.


Book ID
121721530
Publisher
American Institute of Physics
Year
2008
Tongue
English
Weight
481 KB
Volume
92
Category
Article
ISSN
0003-6951

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Self-assembled GaN quantum dots (QDs) grown on Al 0.15 Ga 0.85 N using Si as anti-surfactant were investigated by resonant Raman scattering. Phonons of GaN QDs of different sizes were probed selectively by using laser excitation energies of 3.53 and 5.08 eV. Phonon confinement effects were evidenced