Effect of carrier concentration of InN on the transport behavior of InN/GaN heterostructure based Schottky junctions

✍ Scribed by Basanta Roul; Mahesh Kumar; Mohana K. Rajpalke; Thirumaleshwara N. Bhat; A.T. Kalghatgi; S.B. Krupanidhi

• Book ID: 116890814
• Publisher: Elsevier Science
• Year: 2012
• Tongue: English
• Weight: 710 KB
• Volume: 152
• Category: Article
• ISSN: 0038-1098
• DOI: 10.1016/j.ssc.2012.06.023