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Shubnikov-de Haas effect and effective mass inn-InP in dependence on carrier concentration

✍ Scribed by D. Schneider; D. Rürup; A. Plichta; H. -U. Grubert; A. Schlachetzki; K. Hansen

Book ID
112519377
Publisher
Springer
Year
1994
Tongue
English
Weight
498 KB
Volume
95
Category
Article
ISSN
1434-6036

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## Abstract The vibrational properties of InN samples grown by molecular beam epitaxy (MBE) technique have been studied using infrared (IR) and Raman scattering spectroscopy at room temperature. In the Raman measurements, the 532 nm (2.33 eV) line of laser was used as the excitation source. Lower b