EPMA sputter depth profiling of an InGaAs-InP heterostructure
β Scribed by S. Richter; Peter Karduck
- Book ID
- 105897809
- Publisher
- Springer
- Year
- 1999
- Tongue
- English
- Weight
- 507 KB
- Volume
- 365
- Category
- Article
- ISSN
- 1618-2650
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π SIMILAR VOLUMES
Highly strained InAs/InP heterostructures and lnxGa j\_xAs/lnAs single quantum wells on lnP(100) substrates were grown by molecular beam epitaxy. The fabricated heterostructures were investigated by means of the selected-area X-ray photoelectron spectroscopy (SAXPS) depth profiling technique. The de
Depth proΓling of thin layers in InP using sputtered neutral mass spectrometry with grazing-In 0.53 Ga 0.47 As incidence ion beam sputtering and laser post-ionization was performed and compared with SIMS and AES depth proΓling. The depth resolution was improved by using grazing incidence (at an inci