Depth profiling of InAs/InP and InxGa1−xAs/InAs heterostructures grown by molecular beam epitaxy

✍ Scribed by M.R. Bruni; N. Gambacorti; S. Kačiulis; G. Mattogno; M.G. Simeone; S. Viticoli

• Publisher: Elsevier Science
• Year: 1994
• Tongue: English
• Weight: 340 KB
• Volume: 28
• Category: Article
• ISSN: 0921-5107
• DOI: 10.1016/0921-5107(94)90053-1

✦ Synopsis

Highly strained InAs/InP heterostructures and lnxGa j_xAs/lnAs single quantum wells on lnP(100) substrates were grown by molecular beam epitaxy. The fabricated heterostructures were investigated by means of the selected-area X-ray photoelectron spectroscopy (SAXPS) depth profiling technique. The depth resolution of the SAXPS profiling was found to be limited mainly by the photoelectron information depth. It was demonstrated that the ternary compound InAsxP x is formed on the InP substrate during its deoxidation under an arsenic flux. The thickness of the InAsxP ] -x interracial sublayer was determined and the segregation of indium on the sample and substrate surfaces was revealed from the SAXPS profiles.