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Optical characterization of strained InxGa1−xAs−Al0.28Ga0.72As heterostructures grown by molecular beam epitaxy

✍ Scribed by S.F. Yoon; H.M. Li; K. Radhakrishnan; Z.Y. Han

Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
589 KB
Volume
134
Category
Article
ISSN
0022-0248

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Some properties of strained InxGa1-xAs/A
Some properties of strained InxGa1-xAs/Al0.28Ga0.72As quantum well structures studied using low temperature photoluminescence
✍ S.F. Yoon; K. Radhakrishnan; H.M. Li 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 315 KB

Low temperature photoluminescence measurements were carried out on pseudomorphlcally strained In \(\mathrm{Ga}_{1-\mathrm{A}} \mathrm{As}-\mathrm{Al} \mathrm{O}_{0.28} \mathrm{Ga}_{0.72} \mathrm{As}\) ternary-on-ternary heterostructures grown by molecular beam epitaxy to investigate the change in th