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Sputter depth profiling of GaAlAs double heterostructures using auger electron spectroscopy

✍ Scribed by Dr. T. Chassé; Dr. W. Heichler; Dipl.-Phys. J. Langhammer; Prof. Dr. sc. W. Zwanzig

Publisher
John Wiley and Sons
Year
1987
Tongue
English
Weight
335 KB
Volume
22
Category
Article
ISSN
0232-1300

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In-depth composition profiles of the an&c oxide films grown on Al (1 I1 ), (I 10) and (100) single crystal electrodes in ammonium borate were studied by Auger electron spectroscopy with Ar ion etching. The oxide film had the composition of Ai,O, as referenced to an authentic a-Al,O, single crystal.