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Enhancement-mode In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors with sol–gel processed gate dielectrics

✍ Scribed by Hu, Chih-Chun; Wu, Cheng-En; Lin, Hsien-Cheng; Lee, Kuan-Wei; Wang, Yeong-Her

Book ID: 122166783
Publisher: Elsevier Science
Year: 2015
Tongue: English
Weight: 741 KB
Volume: 29
Category: Article
ISSN: 1369-8001
DOI: 10.1016/j.mssp.2014.04.020

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