✦ LIBER ✦

La2O3/In0.53Ga0.47As metal–oxide-semiconductor capacitor with low interface state density using TiN/W gate electrode

✍ Scribed by Zadeh, D.H.; Oomine, H.; Suzuki, Y.; Kakushima, K.; Ahmet, P.; Nohira, H.; Kataoka, Y.; Nishiyama, A.; Sugii, N.; Tsutsui, K.; Natori, K.; Hattori, T.; Iwai, H.

Book ID: 120375767
Publisher: Elsevier Science
Year: 2013
Tongue: English
Weight: 660 KB
Volume: 82
Category: Article
ISSN: 0038-1101
DOI: 10.1016/j.sse.2013.01.013

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

In[sub 0.53]Ga[sub 0.47]As based metal o

In[sub 0.53]Ga[sub 0.47]As based metal oxide semiconductor capacitors with atomic layer deposition ZrO[sub 2] gate oxide demonstrating low gate leakage current and equivalent oxide thickness less than 1ânm

✍ Koveshnikov, S.; Goel, N.; Majhi, P.; Wen, H.; Santos, M. B.; Oktyabrsky, S.; To 📂 Article 📅 2008 🏛 American Institute of Physics 🌐 English ⚖ 648 KB

High-performance self-aligned inversion-

High-performance self-aligned inversion-channel In[sub 0.53]Ga[sub 0.47]As metal-oxide-semiconductor field-effect-transistor with Al[sub 2]O[sub 3]âGa[sub 2]O[sub 3](Gd[sub 2]O[sub 3]) as gate dielectrics

✍ Lin, T. D.; Chiu, H. C.; Chang, P.; Tung, L. T.; Chen, C. P.; Hong, M.; Kwo, J.; 📂 Article 📅 2008 🏛 American Institute of Physics 🌐 English ⚖ 729 KB

1-nm-capacitance-equivalent-thickness Hf

1-nm-capacitance-equivalent-thickness HfO2/Al2O3/InGaAs metal-oxide-semiconductor structure with low interface trap density and low gate leakage current density

✍ Suzuki, R.; Taoka, N.; Yokoyama, M.; Lee, S.; Kim, S. H.; Hoshii, T.; Yasuda, T. 📂 Article 📅 2012 🏛 American Institute of Physics 🌐 English ⚖ 988 KB