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Enhanced oxygen diffusion in highly doped p-type Czochralski silicon

✍ Scribed by Murphy, J. D.; Wilshaw, P. R.; Pygall, B. C.; Senkader, S.; Falster, R. J.


Book ID
120372007
Publisher
American Institute of Physics
Year
2006
Tongue
English
Weight
368 KB
Volume
100
Category
Article
ISSN
0021-8979

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Enhanced oxygen diffusion in Czochralski
✍ Cui, Can ;Ma, Xiangyang ;Yang, Deren πŸ“‚ Article πŸ“… 2008 πŸ› John Wiley and Sons 🌐 English βš– 283 KB

## Abstract New evidence for the enhanced oxygen diffusion in Czochralski silicon at temperatures ranging from 450 Β°C to 650 Β°C has been obtained from oxygen precipitation in prolonged annealing of 750 Β°C following a variety of pre‐treatments involving slow ramping anneal or single‐step anneal. The