Enhanced oxygen diffusion in Czochralski
β
Cui, Can ;Ma, Xiangyang ;Yang, Deren
π
Article
π
2008
π
John Wiley and Sons
π
English
β 283 KB
## Abstract New evidence for the enhanced oxygen diffusion in Czochralski silicon at temperatures ranging from 450 Β°C to 650 Β°C has been obtained from oxygen precipitation in prolonged annealing of 750 Β°C following a variety of preβtreatments involving slow ramping anneal or singleβstep anneal. The