Enhanced oxygen diffusion in Czochralski silicon at 450-650 °C

✍ Scribed by Cui, Can ;Ma, Xiangyang ;Yang, Deren

• Book ID: 105363972
• Publisher: John Wiley and Sons
• Year: 2008
• Tongue: English
• Weight: 283 KB
• Volume: 205
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.200622582

✦ Synopsis

Abstract

New evidence for the enhanced oxygen diffusion in Czochralski silicon at temperatures ranging from 450 °C to 650 °C has been obtained from oxygen precipitation in prolonged annealing of 750 °C following a variety of pre‐treatments involving slow ramping anneal or single‐step anneal. The two previously proposed fast‐diffusing species of oxygen–vacancy and oxygen–silicon‐interstitial to understand the enhanced oxygen diffusion at low temperatures are questioned. Moreover, the reason as why significant oxygen precipitation can occur at such a low temperature of 750 °C has been elucidated based on the enhanced oxygen diffusion at low temperatures. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)