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Oxygen related donors in Czochralski-grown silicon annealed at 465–650°C

✍ Scribed by Om Prakash; S. Singh


Book ID
108357699
Publisher
Elsevier Science
Year
1999
Tongue
English
Weight
161 KB
Volume
60
Category
Article
ISSN
0022-3697

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Enhanced oxygen diffusion in Czochralski
✍ Cui, Can ;Ma, Xiangyang ;Yang, Deren 📂 Article 📅 2008 🏛 John Wiley and Sons 🌐 English ⚖ 283 KB

## Abstract New evidence for the enhanced oxygen diffusion in Czochralski silicon at temperatures ranging from 450 °C to 650 °C has been obtained from oxygen precipitation in prolonged annealing of 750 °C following a variety of pre‐treatments involving slow ramping anneal or single‐step anneal. The