Enhanced oxygen diffusion in Czochralski
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Cui, Can ;Ma, Xiangyang ;Yang, Deren
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Article
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2008
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John Wiley and Sons
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English
⚖ 283 KB
## Abstract New evidence for the enhanced oxygen diffusion in Czochralski silicon at temperatures ranging from 450 °C to 650 °C has been obtained from oxygen precipitation in prolonged annealing of 750 °C following a variety of pre‐treatments involving slow ramping anneal or single‐step anneal. The