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Oxygen-Related Donors Formed at 600 °C in Silicon in Dependence on Oxygen and Carbon Content

✍ Scribed by Gaworzewski, P. ;Schmalz, K.

Publisher
John Wiley and Sons
Year
1983
Tongue
English
Weight
863 KB
Volume
77
Category
Article
ISSN
0031-8965

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## Abstract The characteristic features of production processes of thermal donors in Czochralski grown silicon heat treated at __T__=450°C under hydrostatic pressures of about 1 GPa are studied. Two families of oxygen‐related donors are formed under compressive stress. The first one is the well‐kno