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Accumulation of Radiation Defects in Oxygen-Containing Silicon Thermally Treated at 600 °C

✍ Scribed by Akhmetov, V. D. ;Bolotov, V. V. ;Smirnov, L. S. ;Zhumaeva, O. I. ;Gaworzewski, P. ;Schmalz, K.

Publisher: John Wiley and Sons
Year: 1982
Tongue: English
Weight: 289 KB
Volume: 72
Category: Article
ISSN: 0031-8965
DOI: 10.1002/pssa.2210720271

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