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Kinetics of Accumulation of Radiation Defects and Annihilation of Vacancies and Interstitials in Carbon- and Boron-Containing Silicon

โœ Scribed by Akhmetov, V. D. ;Bolotov, V. V.


Publisher
John Wiley and Sons
Year
1982
Tongue
English
Weight
466 KB
Volume
72
Category
Article
ISSN
0031-8965

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Point defect transport in a growing crystal includes a drift along the temperature gradient, G, at a velocity ห›G. It was not clear if the drift is negligible or strong in silicon crystal growth. It is now found that reported microdefect patterns in crystals grown with a temporarily halt provide a cl