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Gigantic uphill drift of vacancies and self-interstitials in silicon

✍ Scribed by V.V. Voronkov; R. Falster

Publisher: Elsevier Science
Year: 2009
Tongue: English
Weight: 288 KB
Volume: 159-160
Category: Article
ISSN: 0921-5107
DOI: 10.1016/j.mseb.2008.10.051

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✦ Synopsis

Point defect transport in a growing crystal includes a drift along the temperature gradient, G, at a velocity ˛G. It was not clear if the drift is negligible or strong in silicon crystal growth. It is now found that reported microdefect patterns in crystals grown with a temporarily halt provide a clear evidence in favour of a strong (even gigantic) drift of both kinds of intrinsic point defects. The drift coefficients ˛V (for vacancies) and ˛I (for self-interstitials) are deduced by fitting the simulating defect profiles to the observed location of halt-induced interstitial region immersed into a vacancy-type crystal.

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