Accumulation of Radiation Defects in Oxygen-Rich n-Type Silicon Heat-Treated at Temperatures from 600 to 1000 °C

✍ Scribed by Bolotov, V. V. ;Kakpov, A. V. ;Stuchinsky, V. A. ;Schmalz, K.

• Publisher: John Wiley and Sons
• Year: 1986
• Tongue: English
• Weight: 353 KB
• Volume: 96
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.2210960115