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Oxygen donor formation and oxygen precipitation in czochralski silicon due to heat treatment at 600 to 800 °c

✍ Scribed by Gaworzewski, P. ;Hild, E. ;Schmalz, K.


Publisher
John Wiley and Sons
Year
1985
Tongue
English
Weight
262 KB
Volume
90
Category
Article
ISSN
0031-8965

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