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Deep Levels in Czochralski p-Si Due to Heat Treatment at 600 to 900 °C

✍ Scribed by Schmalz, K. ;Gaworzewski, P. ;Kirscht, F. -G.


Publisher
John Wiley and Sons
Year
1984
Tongue
English
Weight
239 KB
Volume
81
Category
Article
ISSN
0031-8965

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