DLTS study on deep level defects in Cz-p-Si due to heat treatment at 600 to 900 °C

✍ Scribed by Schmalz, K. ;Kirscht, F.-G. ;Klose, H. ;Richter, H. ;Tittelbach-Helmrich, K.

• Publisher: John Wiley and Sons
• Year: 1987
• Tongue: English
• Weight: 980 KB
• Volume: 100
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.2211000223