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New oxygen-induced recombination centres in 600 to 800 °C heat-treated silicon

✍ Scribed by Borimskii, V. V. ;Glinchuk, K. D. ;Litovchenko, N. M. ;Salnic, Z. A.

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

A Variety of Oxygen-Induced Recombinatio

✍ Glinchuk, K. D. ;Litovchenko, N. M. ;Yu. Ptitsin, V. 📂 Article 📅 1986 🏛 John Wiley and Sons 🌐 English ⚖ 436 KB

Structure and formation kinetics of oxyg

✍ Glinchuk, K. D. ;Litovchenko, N. M. ;Salntik, Z. A. 📂 Article 📅 1982 🏛 John Wiley and Sons 🌐 English ⚖ 326 KB

Influence of Germanium on the Formation

✍ Glinchuk, K. D. ;Litovchenko, N. M. ;Ptitsin, V. Yu. 📂 Article 📅 1989 🏛 John Wiley and Sons 🌐 English ⚖ 240 KB

Oxygen donor formation and oxygen precip

✍ Gaworzewski, P. ;Hild, E. ;Schmalz, K. 📂 Article 📅 1985 🏛 John Wiley and Sons 🌐 English ⚖ 262 KB

Influence of carbon and preannealing on

✍ Borimskii, V. V. ;Glinchuk, K. D. ;Litovhenko, N. M. ;Salnik, Z. A. 📂 Article 📅 1984 🏛 John Wiley and Sons 🌐 English ⚖ 360 KB

Accumulation of Radiation Defects in Oxy

✍ Bolotov, V. V. ;Kakpov, A. V. ;Stuchinsky, V. A. ;Schmalz, K. 📂 Article 📅 1986 🏛 John Wiley and Sons 🌐 English ⚖ 353 KB