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Temperature-dependent retardation effect of dopants on oxygen diffusion in heavily doped Czochralski silicon

✍ Scribed by Takeno, Hiroshi; Sunakawa, Ken; Suezawa, Masashi

Book ID: 120809169
Publisher: American Institute of Physics
Year: 2000
Tongue: English
Weight: 262 KB
Volume: 77
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.126981

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