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The effect of the ramping rate on oxygen precipitation and the denuded zone in heavily doped Czochralski silicon

✍ Scribed by Zhao, Yiying; Li, Dongsheng; Ma, Xiangyang; Yang, Deren

Book ID
111866566
Publisher
Institute of Physics
Year
2004
Tongue
English
Weight
127 KB
Volume
16
Category
Article
ISSN
0953-8984

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