𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Effect of rapid thermal process on oxygen precipitation and denuded zone in nitrogen-doped silicon wafers

✍ Scribed by Xuegong Yu; Deren Yang; Xiangyang Ma; Duanlin Que

Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
321 KB
Volume
69
Category
Article
ISSN
0167-9317

No coin nor oath required. For personal study only.

✦ Synopsis

The effect of rapid thermal process (RTP) on the oxygen precipitation and on the denuded zone (DZ) formation in nitrogen-doped Czochralski (NCZ) silicon wafers has been investigated. The DZ can be formed at the surface of NCZ wafers subjected to RTP annealing. However, the oxygen precipitation and bulk microdefects in NCZ silicon are changed by RTP preannealing, which is a result of N-N bonds broken during RTP treatment.

πŸ“œ SIMILAR VOLUMES

Effects of high temperature rapid therma
Effects of high temperature rapid thermal processing on oxygen precipitation in heavily arsenic-doped Czochralski silicon
✍ Biao Wang; Xinpeng Zhang; Xiangyang Ma; Deren Yang πŸ“‚ Article πŸ“… 2011 πŸ› Elsevier Science 🌐 English βš– 545 KB

Oxygen precipitation (OP) behaviors in heavily arsenic-doped Czochralski silicon wafers without and with prior rapid thermal processing at 1100-1250 1C, subjected to subsequent two-step anneal of 450, 650 and 800 1C/4 h+1000 1C/16 h, have been investigated. It is found that the prior RTP at 1250 1C