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Effects of annealing in oxygen and nitrogen atmosphere on F.Z. silicon wafers

✍ Scribed by N. Gay; F. Floret; S. Martinuzzi; L. Roux; J. Arnould; G. Mathieu

Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
321 KB
Volume
36
Category
Article
ISSN
0921-5107

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The influence of dislocations on nitrogenΒ±oxygen (NΒ±O) complexes in nitrogen-doped Czochralski (NCZ) silicon was investigated. It was found that NΒ±O complexes were generated during annealing at 650 C for 10 min. In the early stage of annealing the amount of the NΒ±O complexes in NCZ silicon with disl