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Effect of silicon implantation and annealing on oxygen in Y3A15012

✍ Scribed by I. Sakaguchi; S. Hishita; H. Haneda; T. Yanagitani


Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
268 KB
Volume
33
Category
Article
ISSN
0921-5107

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The effect of implantation temperature and oxygen dose on the structure of as-implanted separation by implantation of oxygen (SIMOX) wafers was studied by means of Rutherford backscattering spectrometry and ion channelling, secondary ion mass spectrometry and cross-sectional transmission electron mi