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Implantation and annealing of aluminum in 4H silicon carbide

✍ Scribed by M. Rambach; F. Schmid; M. Krieger; L. Frey; A.J. Bauer; G. Pensl; H. Ryssel


Publisher
Elsevier Science
Year
2005
Tongue
English
Weight
229 KB
Volume
237
Category
Article
ISSN
0168-583X

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πŸ“œ SIMILAR VOLUMES


Defect production and annealing in ion i
✍ A. Heft; E. Wendler; T. Bachmann; E. Glaser; W. Wesch πŸ“‚ Article πŸ“… 1995 πŸ› Elsevier Science 🌐 English βš– 375 KB

In the present study we investigated damage production and annealing in 6H SiC wafers implanted with 230 keV Ga + ions in a wide dose range at various temperatures. Analysis of the implanted layers was performed by the Rutherford backscattering (RBS) channeling technique and by transmission electron