Defect production and annealing in ion i
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A. Heft; E. Wendler; T. Bachmann; E. Glaser; W. Wesch
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Article
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1995
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Elsevier Science
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English
β 375 KB
In the present study we investigated damage production and annealing in 6H SiC wafers implanted with 230 keV Ga + ions in a wide dose range at various temperatures. Analysis of the implanted layers was performed by the Rutherford backscattering (RBS) channeling technique and by transmission electron