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Laser annealing of Al implanted silicon carbide: Structural and optical characterization

โœ Scribed by C. Boutopoulos; P. Terzis; I. Zergioti; A.G. Kontos; K. Zekentes; K. Giannakopoulos; Y.S. Raptis


Publisher
Elsevier Science
Year
2007
Tongue
English
Weight
395 KB
Volume
253
Category
Article
ISSN
0169-4332

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Q-switched ruby laser is used to anneal nitrogen and oxygen heavily implanted < 100 > silicon wafers. The atomic concentration of nitrogen and oxygen in the implanted layer is about 4%, which is a value higher than the solid solubility of these elements in silicon. The thermal epitaxial regrowth of