Laser annealing of nitrogen and oxigen ion implanted silicon layers

✍ Scribed by G. Della Mea; P. Mazzoldi; G. Foti; E. Rimini

• Publisher: Elsevier Science
• Year: 1979
• Weight: 192 KB
• Volume: 4
• Category: Article
• ISSN: 0390-6035
• DOI: 10.1016/0390-6035(79)90042-7

✦ Synopsis

Q-switched ruby laser is used to anneal nitrogen and oxygen heavily implanted < 100 > silicon wafers. The atomic concentration of nitrogen and oxygen in the implanted layer is about 4%, which is a value higher than the solid solubility of these elements in silicon. The thermal epitaxial regrowth of a-r!.) morphized Si-layers on Si substrate is inhibited at these high nitrogen and oxygen concentration, whereas a very good crystallinity ie obtained after laser irradiation.