Q-switched ruby laser is used to anneal nitrogen and oxygen heavily implanted < 100 > silicon wafers. The atomic concentration of nitrogen and oxygen in the implanted layer is about 4%, which is a value higher than the solid solubility of these elements in silicon. The thermal epitaxial regrowth of
โฆ LIBER โฆ
Differences between ruby and Nd:YAG laser annealing of ion implanted silicon
โ Scribed by Y. Tamminga; G.E.J. Eggermont; W.K. Hofker; D. Hoonhout; R. Garrett; F.W. Saris
- Publisher
- Elsevier Science
- Year
- 1979
- Tongue
- English
- Weight
- 250 KB
- Volume
- 69
- Category
- Article
- ISSN
- 0375-9601
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