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Raman scattering study of ion implanted and C.W.-Laser annealed polycrystalline silicon

โœ Scribed by S. Nakashima; S. Oima; A. Mitsuishi; T. Nishimura; T. Fukumoto; Y. Akasaka

Publisher
Elsevier Science
Year
1981
Tongue
English
Weight
406 KB
Volume
40
Category
Article
ISSN
0038-1098

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Raman scattering study on Ga1โ€“xMnx As pr
Raman scattering study on Ga1โ€“xMnx As prepared by Mn ions implantation, deposition and post-annealing
โœ M. R. Islam; N. F. Chen; M. Yamada ๐Ÿ“‚ Article ๐Ÿ“… 2009 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 257 KB

Raman scattering measurements have been performed in Ga 1-x Mn x As crystals prepared by Mn ions implantation, deposition, and post-annealing. The Raman spectrum measured from the implanted surface of the sample shows some weak phonon modes in addition to GaAs-like phonon modes, where the GaAs-like