A comparison between excimer laser and thermal annealing for ion-implanted polycrystalline silicon solar cells

✍ Scribed by W. Sinke; A. Polman; F.W. Saris

• Publisher: Elsevier Science
• Year: 1987
• Weight: 412 KB
• Volume: 20
• Category: Article
• ISSN: 0379-6787
• DOI: 10.1016/0379-6787(87)90020-2

✦ Synopsis

PolycrystaUine silicon (Wacker-SILSO) solar cells have been made by phosphorus implantation in combination with pulsed excimer laser annealing or thermal annealing. It was found that laser annealing yields cells with a short-circuit current which is 3% -4% higher than that obtained by thermal annealing, whereas the open-circuit voltage is the same for both cases. It was concluded from curve fitting that the current-voltage characteristics of all cells could be described well using a double-exponential model.