The effect of dose and temperature on the as-implanted microstructure of oxygen-implanted silicon

✍ Scribed by N. Hatzopoulos; R. Chater; U. Bussmann; P.L.F. Hemment; J.A. Kilner

• Publisher: Elsevier Science
• Year: 1992
• Tongue: English
• Weight: 385 KB
• Volume: 12
• Category: Article
• ISSN: 0921-5107
• DOI: 10.1016/0921-5107(92)90255-8

✦ Synopsis

The effect of implantation temperature and oxygen dose on the structure of as-implanted separation by implantation of oxygen (SIMOX) wafers was studied by means of Rutherford backscattering spectrometry and ion channelling, secondary ion mass spectrometry and cross-sectional transmission electron microscopy. Silicon wafers were implanted with 400 keV 320 3 ions at implantation temperatures varying from 200 °C to 700 °C, with oxygen doses from 5 x 10 ~' O + cm -2 to 1.4 x 10 ~ O ÷ cm -2. The formation of an amorphous phase in the buried layer, the crystallinity of the silicon overlayer and the corresponding layer thicknesses were monitored. A critical dose for the formation of an amorphous layer was established as a function of implantation temperature T~. The influence of T~ on the microstructure was examined for a constant dose. The damage in the buried layer and the damage in the silicon overlayer relate to the implanted dose and the implantation temperature in a complex way.