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Effect of pre-implanted oxygen in Si on the retention of implanted He

✍ Scribed by A. Manuaba; F. Pászti; A.R. Ramos; N.Q. Khánh; B. Pécz; Z. Zolnai; A. Tunyogi; E. Szilágyi

Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
215 KB
Volume
249
Category
Article
ISSN
0168-583X

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The effect of implantation temperature and oxygen dose on the structure of as-implanted separation by implantation of oxygen (SIMOX) wafers was studied by means of Rutherford backscattering spectrometry and ion channelling, secondary ion mass spectrometry and cross-sectional transmission electron mi