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Oxygen diffusion in heavily antimony-, arsenic-, and boron-doped Czochralski silicon wafers

✍ Scribed by Ono, Toshiaki; Rozgonyi, George A.; Asayama, Eiichi; Horie, Hiroshi; Tsuya, Hideki; Sueoka, Koji

Book ID: 120809167
Publisher: American Institute of Physics
Year: 1999
Tongue: English
Weight: 277 KB
Volume: 74
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.123210

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