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Retarded oxygen diffusion in heavily phosphorus-doped Czochralski silicon: experiments and first-principles calculations

✍ Scribed by Gao, Chao; Wang, Zhenhui; Liang, Xingbo; Tian, Daxi; Liu, Hongyan; Ma, Xiangyang; Yang, Deren


Book ID
118250886
Publisher
Institute of Physics
Year
2012
Tongue
English
Weight
720 KB
Volume
24
Category
Article
ISSN
0953-8984

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