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Energy-band alignment of Al2O3 and HfAlO gate dielectrics deposited by atomic layer deposition on 4H–SiC

✍ Scribed by Suri, Rahul; Kirkpatrick, Casey J.; Lichtenwalner, Daniel J.; Misra, Veena

Book ID: 118744518
Publisher: American Institute of Physics
Year: 2010
Tongue: English
Weight: 774 KB
Volume: 96
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.3291620

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