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Suppressed crystallization of Hf-based gate dielectrics by controlled addition of Al[sub 2]O[sub 3] using atomic layer deposition

✍ Scribed by Ho, M.-Y.; Gong, H.; Wilk, G. D.; Busch, B. W.; Green, M. L.; Lin, W. H.; See, A.; Lahiri, S. K.; Loomans, M. E.; RaÌisaÌnen, Petri I.; Gustafsson, T.

Book ID: 120078797
Publisher: American Institute of Physics
Year: 2002
Tongue: English
Weight: 361 KB
Volume: 81
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.1522826

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